| PART |
Description |
Maker |
| GS8330LW36C-250 GS8330LW36C-250I GS8330LW36C-200 G |
36Mb Common I/O SigmaRAMs
36Mb ヒ1x1Lp CMOS I/O Late Write SigmaRAM
|
GSI[GSI Technology]
|
| GS8321ZV36E-250I GS8321ZV36E-225I GS8321ZV36E-133 |
Octal 16-/12-Bit Rail-to-Rail DACs with 10ppm/C Max Reference; Package: 20-TSSOP; Temperature Range: 0°C to 70°C
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8.5 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 8.5 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 32 ZBT SRAM, 6.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MBS /双氰胺同步突发静态存储器
DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35
(GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
|
ETC
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| GS832118 |
36Mb Burst SRAMs
|
GSI Technology
|
| GS8320E18T-150I GS8320E18T-166I GS8320E18T-200 GS8 |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS8320EV18GT-225 GS8320EV18GT-133 GS8320EV18GT-133 |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS8320V18GT-250 GS8320V18GT-250I GS8320V18T-133I G |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| AS5SP1M36DQR-167_ET AS5SP1M36DQR-167_IT AS5SP1M36D |
36Mb Pipelined Sync SRAM
|
Austin Semiconductor
|
| GS832272C-250I GS832218 GS832218B GS832218B-133 GS |
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
|
GSI Technology
ETC[ETC]
|
| GS8321Z18E-200V GS8321Z18E-133IV GS8321Z18E-133V G |
36Mb Pipelined and Flow Through Synchronous NBT SRAMs
|
GSI[GSI Technology]
|
| GS8321E36E-250IV GS8321E18E-166IV GS8321E32GE-166V |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 36 CACHE SRAM, 5.5 ns, PBGA165
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 2M X 18 CACHE SRAM, 7 ns, PBGA165
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 32 CACHE SRAM, 7 ns, PBGA165
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 2M X 18 CACHE SRAM, 7.5 ns, PBGA165
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 36 CACHE SRAM, 7 ns, PBGA165
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 32 CACHE SRAM, 8.5 ns, PBGA165
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 32 CACHE SRAM, 6 ns, PBGA165
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 32 CACHE SRAM, 5.5 ns, PBGA165
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 2M X 18 CACHE SRAM, 6 ns, PBGA165
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 36 CACHE SRAM, 6 ns, PBGA165
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 2M X 18 CACHE SRAM, 6.5 ns, PBGA165
|
GSI Technology, Inc.
|
|
